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SHINDENGEN
Schottky Rectifiers (SBD)
Single
D1FS4
40V 1.1A
FEATURES *oe Small SMT *oe Tj150*Z *oe PRRSM avalanche guaranteed APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication
OUTLINE DIMENSIONS
Case : 1F Unit : mm
RATINGS
*oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 40 V Repetitive Peak Surge Reverse VoltagePulse width 0.5ms, duty 1/40 V RRSM 45 V Average Rectified Forward Current 50Hz sine wave, R-load Ta=51*Z*@On alumina substrate A IO 1.1 50Hz sine wave, R-load Ta=44*Z*@On glass-epoxy substrate 0.85 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125*Z A 30 Repetitive Peak Surge Reverse Power Pulse width 10Es, Tj=25*Z W PRRSM 160 *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Forward Voltage =1.1A, Pulse measurement VF IF Reverse Current IR V=V , R RM Pulse measurement Junction Capacitance Cj f=1MHz, R V =10V junction to lead AEjl Thermal Resistance AEja junction to ambient*@On alumina substrate junction to ambient*@On glass-epoxy substrate Ratings Unit Max.0.55 V Max.1 mA Typ.65 pF Max.23 Max.108 *Z/W Max.157
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
D1FS4
Forward Voltage
10
Forward Current IF [A]
1
Tl=150C [MAX] Tl=150C [TYP] Tl=25C [MAX] 0.1 Tl=25C [TYP]
Pulse measurement per diode
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
D1FS4
Junction Capacitance
f=1MHz Tl=25C TYP per diode
Junction Capacitance Cj [pF]
100
10
0.1
1
10
Reverse Voltage VR [V]
D1FS4
1000
Reverse Current
100 Tl=150C [MAX]
Reverse Current IR [mA]
10
Tl=150C [TYP]
Tl=125C [TYP]
1
Tl=100C [TYP]
Tl=75C [TYP] 0.1
Pulse measurement per diode
0.01
0
5
10
15
20
25
30
35
40
Reverse Voltage VR [V]
D1FS4
2.5
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
2
DC D=0.05 0.1 0.2
1.5
0.3
1
0.5
0.5
SIN 0.8
0
0
10
20
30
40
50
Reverse Voltage VR [V]
Tj = 150C
0 VR tp D=tp /T T
D1FS4
1.2
Forward Power Dissipation
Forward Power Dissipation PF [W]
1 0.5
DC D=0.8 SIN 0.2 0.3
0.8
0.6
0.05
0.1
0.4
0.2
0
0
0.5
1
1.5
2
Average Rectified Forward Current IO [A]
Tj = 150C IO 0 tp D=tp /T T
D1FS4
1.2
Forward Power Dissipation
Forward Power Dissipation PF [W]
1 0.5
DC D=0.8 SIN 0.2 0.3
0.8
0.6
0.05
0.1
0.4
0.2
0
0
0.5
1
1.5
2
Average Rectified Forward Current IO [A]
Tj = 150C IO 0 tp D=tp /T T
D1FS4
2
Derating Curve
Average Rectified Forward Current IO [A]
DC D=0.8 1.5 0.5 SIN 1 0.3 0.2 0.1 0.5 0.05
Alumina substrate Soldering land 2mm Conductor layer 20m Substrate thickness 0.64mm
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [C]
VR = 20V 0 0
IO
VR tp D=tp /T T
D1FS4
Average Rectified Forward Current IO [A]
1.6 DC 1.2 D=0.8
Derating Curve
Glass-epoxy substrate Soldering land 2mm Conductor layer 35m
0.5 SIN 0.8 0.3 0.2 0.1 0.05
0.4
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [C]
VR = 20V 0 0
IO
VR tp D=tp /T T
D1FS4
60
Peak Surge Forward Capability
IFSM
10ms 10ms
50
1 cycle
Peak Surge Forward Current IFSM [A]
non-repetitive, sine wave, Tj=125C before surge current is applied
40
30
20
10
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
SBD
120
Repetitive Surge Reverse Power Derating Curve
100
PRRSM Derating [%]
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [C]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP
SBD
10
Repetitive Surge Reverse Power Capability
PRRSM p) / PRRSM p=10s) Ratio (t (t
1
0.1
1
10
100
Pulse Width t p [s]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP

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